- J.P. Colinge, Multiple-gate SOI MOSFETs. Solid-State Electron. 48, 875 (2004)CrossRefGoogle Scholar
- N. Singh, K.D. Buddharaju, S.K. Manhas, A. Agarwal, S.C. Rustagi, G.Q. Lo, N. Balasubramanian, D.L. Kwong, Si, SiGe nanowire devices by top–down technology and their applications. IEEE Trans. Electron Devices 55, 3107 (2008)Google Scholar
- K. Nayak, M. Bajaj, A. Konar, P.J. Oldiges, K. Natori, H. Iwai, K.V.R.M. Murali, V.R. Rao, CMOS logic device and circuit performance of si gate all around nanowire MOSFET. IEEE Trans. Electron Devices 61, 3066 (2014)CrossRefGoogle Scholar
- ITRS version 2.0 (2015), http://www.semiconductors.org/main/2015_international_technology_roadmap_for_semiconductors_itrs/
- M.S. Yeh, Y.J. Lee, M.F. Hung, K.C. Liu, Y.C. Wu, High-performance Gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation. IEEE Trans. Nanotechnol. 12, 636 (2013)CrossRefGoogle Scholar
- H.B. Chen, C.Y. Chang, N.H. Lu, J.J. Wu, M.H. Han, Y.C. Cheng, Y.C. Wu, Characteristics of Gate-all-around junctionless poly-Si TFTs with an ultrathin channel. IEEE Electron Device Lett. 34, 897 (2013)CrossRefGoogle Scholar
Introduction Nanoscale double gate (DG) and cylindrical gate-all-around (GAA) MOSFETs have been identified as strong candidates for replacing the conventional bulk MOSFET. A major impetus for this advance is the improved gate control and the concomitant reduction in. N-channel GAA MOSFET with Ag gate is used for oxygen sensing and p-channel GAA MOSFET with Pd gate is used for hydrogen sensing.
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- The MOSFET, which can be classified as a gate-all-around FET, also makes use of a silicon-on-insulator (SOI) substrate. A flexible doping scheme has also been devised to enable high-performance and low-operating power designs with the technology.
- Abstract— According to the prediction of International Technology Roadmap for semiconductor (ITRS), the transistor could stop shrinking in 2021.